橢偏儀在位表征電化學沉積的係統搭建（四）-電化學沉積及原理

正文

橢偏儀(yi) 在位表征電化學沉積的係統搭建（四）-電化學沉積及原理

2.電化學沉積

電化學沉積是半導體(ti) 薄膜沉積和微電子製備銅互連的重要製備方法。而在沉積過程中的成核和生長對於(yu) 半導體(ti) 薄膜和銅互連的性質非常重要，橢偏儀(yi) 在位監測提供一種實時監控薄膜沉積的方法。但是橢偏儀(yi) 在位監測受到光路設計，實驗裝置，固液界麵以及光譜解析的影響，構建其監測係統是一個(ge) 挑戰。實驗室前期對電化學沉積Cu₂O薄膜進行了係統的研究，發現其沉積與(yu) 沉積電壓、溶液溫度和pH值等密切相關(guan) 。本文以電化學沉積Cu₂O薄膜為(wei) 例，從(cong) 而在實驗室構建橢偏儀(yi) 在位監控電化學沉積係統。

不同於(yu) 真空薄膜生長，電化學沉積生長過程涉及到溶液層和固液界麵，導致其在位監測是一個(ge) 挑戰。

2.1原理

電化學沉積是利用氧化還原反應在電極表麵上沉積得到各種薄膜的材料製備方法。在沉積過程中電極表麵的狀態、沉積電壓或電流的大小、沉積電解液的溫度和pH值都會(hui) 對得到的薄膜的相產(chan) 生影響。故而可以通過沉積中電壓、電流的調控沉積不同成分組成及不同微觀形貌的薄膜。利用電化學沉積可以減小製作成本、提高產(chan) 量，且由於(yu) 其較好的可控性和可操作性，目前已經廣泛国产成人在线观看免费网站於(yu) 工業(ye) 化生產(chan) ，實現電化學大規模沉積。

電化學薄膜沉積可分為(wei) 恒壓沉積和恒電流沉積。恒壓法又分為(wei) 過電位沉積和欠電位沉積。過電位沉積就是在大於(yu) 能斯特電位的電壓下進行沉積。欠電位沉積除了在單層(亞(ya) 單層)沉積外，有時當基底影響到第二、第三個(ge) 單層時也可以在欠電位下沉積。Hevesy於(yu) 1912年第1次報道了不同放射性元素在Cu電極上的欠電位沉積現象。目前，報道過的欠電位沉積體(ti) 係有質子性溶劑、離子液體(ti) 及有機溶劑等。

在電化學過程中，由於(yu) 電化學反應的存在電極和溶液界麵會(hui) 出現溶劑離子濃度從(cong) 本體(ti) 溶液濃到電極界麵濃度降低的過程，而從(cong) 本體(ti) 溶液濃度到電極表麵溶液濃度的這一過渡區域就叫擴散層。圖1-6為(wei) Gouy-Chapman-Stern雙電層模型，擴散層是外亥姆霍茲(zi) 層(OHP)到溶劑濃度達本體(ti) 溶液濃度的區域，擴散層的厚度取決(jue) 於(yu) 溶液中離子的濃度，當濃度大於(yu) 10-2M時，擴散層的厚度將小於(yu) 30nm。

圖1-6電極-溶液雙層區模型

因此電化學沉積過程發生在固液界麵，而溶液的固液界麵比較複雜，包含了擴散層等。

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